Electronic Circuit with Controllable Negative Differential Resistance and its Applications
نویسندگان
چکیده
منابع مشابه
Design of Dynamic Frequency Divider using Negative Differential Resistance Circuit
The behavior of two frequency divider circuits using negative differential resistance (NDR) circuit is studied. This NDR circuit is made of three resistors (R) and two bipolar-junction-transistor (BJT) devices. It can show the NDR characteristic in its current-voltage curve by suitably designing the resistances. We discuss a dynamic frequency divider, which is made of a R-BJT-NDR circuit, an in...
متن کاملIntegration of Si/SiGe HBT and Si-based RITD demonstrating controllable negative differential resistance for wireless applications
Si-based resonant interband tunnel diodes (RITD) were monolithically integrated with Si/SiGe heterojunction bipolar transistors (HBT) on silicon substrates effectively creating a 3-terminal negative differential resistance (NDR) device. We demonstrate that the room temperature NDR in the IC–VEC characteristics under common emitter configuration can be controlled by a third terminal which is the...
متن کاملGraphene polarity controllable amplifier and its applications
This paper exploits the unique ambipolar conduction property of graphene field effect transistors to realize a single transistor polarity controllable amplifier. The amplifier is polarity controllable since its small signal gain can be switched between positive and negative modes through proper biasing. Polarity controllable amplifiers can greatly simplify communication circuits in applications...
متن کاملthe past hospitalization and its association with suicide attempts and ideation in patients with mdd and comparison with bmd (depressed type) group
چکیده ندارد.
Electronic and transport behavior of doped armchair silicene nanoribbons exhibiting negative differential resistance and its FET performance
In the present work, density functional theory (DFT) combined with non-equilibrium Green’s function (NEGF) formalism is performed. The electronic properties (band structure and density of states) and transport properties (transmission spectrum and I–V characteristics) of armchair silicene nanoribbons (ASiNRs) doped with various elements, such as Al, Ga, In, Tl, P, As, Sb and Bi, are investigate...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Electronics
سال: 2019
ISSN: 2079-9292
DOI: 10.3390/electronics8040409